Magnetoresistive Random Access Memory (MRAM) technology was introduced into the market last decade in the form of Toggle MRAM. Spin Transfer Torque (STT) MRAM, the next generation of Magnetic Tunnel Junction (MTJ) based memory, has now become available offering higher density and bandwidth. This talk will cover the device and design fundamentals, associated challenges, and the outlook of this evolving MTJ based memory.
Biography: Syed M. Alam is currently the Sr. Director of Design engineering at Everspin Technologies leading the design functional areas for embedded and standalone STT-MRAM. He has worked on various aspects of design including bitcell, array circuits, architecture, and new product introduction supporting test and DDR high-speed characterization for STT-MRAM. Dr. Alam received his BS degree in Electrical Engineering from UT Austin in 1999, MS and PhD degrees in Electrical Engineering and Computer Science from MIT in 2001 and 2004, respectively. He has mentored/co-advised 5 PhD students for research on 3D integration and logic-in-memory architecture. Dr. Alam has over 90 issued US patents, and multiple journal/conference publications.
Date: 20 Jul 2021
Time: 06:00 PM to 08:00 PM