Joint Meeting: Central Texas Section Electron Devices, Consultant’s Network, and Life Member chapters.

Date/Time: 11 Aug 2022, 05:00 PM to 06:30 PM Central Time

Speaker: Ariful Haque of Ingram School of Engineering, Texas State University

Speaker Bio: Dr. Ariful Haque is an Assistant Professor of Electrical Engineering in the Ingram School of Engineering at Texas State University. He also holds an appointment in the Materials Science, Engineering & Commercialization program at Texas State. Prior to joining TXState, he worked as a Technology Development Mod. & Integr. Yield Engineer in the Logic Technology Development (LTD) division at Intel Corporation in the USA, where he aided in developing next-generation semiconductor process technology. He received Ph.D. degrees in two different majors, i.e., Electrical Engineering (EE) and Materials Science & Engineering (MSE), from North Carolina State University (NCSU). He was also a research assistant in the National Science Foundation Center for Advanced Materials and Smart Structures at NCSU. During his Ph.D., he investigated the fabrication, characterization, and optimization of carbon-based and III-nitride-based semiconductor materials and devices. He completed the Master of Nanoengineering degree from NCSU, focusing on nanoelectronics and nanophotonics. He holds another MS degree in Materials Science from Missouri State University (2015). His bachelor’s degree is in Electrical & Electronic Engineering from Bangladesh University of Engineering & Technology in 2012. Dr. Haque has published over 30 articles in journals and IEEE transactions, 6 proceedings papers, and given over a dozen of conference presentations and invited talks at reputed international conferences and universities worldwide.

Abstract: My research interests revolve in the area of the fabrication, characterization, and processing of carbon-based semiconductor thin films and nano-structures. We use fundamentally non-equilibrium pulsed laser deposition and pulsed laser annealing processes for the formation of novel quenched solid phase of carbon (Q-carbon) at room temperature and atmospheric pressure for electron field-emission device applications. The electron field-emission devices that we fabricate by the laser processed carbon structures have shown excellent electric field enhancement, very low turn-on electric fields, and high emission current densities over long periods with tremendous stability even at high temperatures. The turn-on field required to draw an emission current density of 1 μA/cm2 is found to be 2.4 V/μm. The Q-carbon films show good electron emission stability as a function of time. The microstructure and morphology of the field emitting Q-carbon films were analyzed by a variety of techniques, including field emission scanning electron microscopeRaman spectroscopy, and atomic force microscopy. Our results show a very high emission current density value of ~30 μA/cm2 at an applied electric field of 2.65 V/μm, which is hysteresis-free and stable. The generated emission current has been found to have low fluctuations (<4%) and shows no generation of defects during repeated emission measurements on the sample. Along with the excellent emission stability, the Q-carbon composite structure demonstrates outstanding thermal sensitivity during field emission tests, which can open new frontiers for applications in sensor and heat-controlled electron sources.

Location: The meeting will be held in Hybrid mode. Attendees by ZOOM will receive the ZOOM link the day before the meeting. For those attending in-person, it will be held at: Texas State University, 310 W. Woods St, San Marcos, Texas.


Texas State University
310 W. Woods St
San Marcos, Texas