Week of Events
IEEE Day 2016 in Houston
IEEE Day 2016 in Houston
Co-sponsored by: Fabiola Lopez Registration Highly Recommended Registration fees are refunded on the day of event to registered attendees only. We are requesting registration to better manage expenses and prepurchases of movie tickets in advance. What is IEEE Day? IEEE Day: Celebrating the first time in history when engineers worldwide and IEEE members gathered to share their technical ideas in 1884. IEEE Day’s theme is: “Leveraging Technology for a Better Tomorrow”. While the world benefits from what’s new, IEEE focuses on what’s next. IEEE Day 2016 is the 7th edition of the same and will be celebrated on 4th October 2016. Worldwide celebrations demonstrate the ways thousands of IEEE members in local communities join together to collaborate on ideas that leverage technology for a better tomorrow. We celebrate IEEE members! IEEE Day Houston This years IEEE Day Committe Chairperson is Fabiola Lopez and the committe has planed a great event with Dinner and a Movie. Agenda: Dinner at Cafe' Express Where: 3800 SW Freeway, Suite 124, Houston, TX 77027 When: 5:30 Movie at Greenway Edwards Cinema Movie: Skully Where: 3839 Weslayan St, Houston, TX 77027 When: 8:00 PM Location: Bldg: Cafe' Express 3800 SW Freeway Suite 124 Houston, Texas 77027
Types of Neutral Grounding in Power Distribution
Types of Neutral Grounding in Power Distribution
“Types of Neutral Grounding in Power Distribution” (1 CEU) Introduction Limiting ground fault current to reduce arc blast, thermal effects, mechanical stresses, shock hazards, manage system outages, control transient over voltages. Applications in low voltage and medium voltage. Ungrounded Neutral. Solidly Grounded Neutral. Resistance Grounded Neutral. Low Resistance High Resistance Resonant Grounded Neutral. Fault current assessment for each case. High impedance fault. Gross Potential Rise consideration. Potential transfer and associated risks. Arrester selection for each neutral grounding configuration. Upstream effects, utility network. Speaker(s): J. Kesic, Agenda: Dinner 5:30pm - 6:00pm Lecture 6:00pm - 7:00pm Location: 1700 West Loop South Suite 1500 Houston, Texas 77027
Semiconductor nano wires for optoelectronic and energy applications
Semiconductor nano wires for optoelectronic and energy applications
IEEE Photonics Seminar Dr. Hoe Tan Date: October 7 Time: 4 PM Location: Rice University, Duncan Hall 1064 Semiconductor nano wires for optoelectronic and energy applications Dr. Hoe Tan Department Head of Electronic Materials EngineeringResearch School of Physics and Engineering, The Australian National University Abstract: The excitement of nanowire research is due to the unique electronic and optical properties of these nanostructures. Both axial and radial heterostructure nanowires have been proposed as nano-building blocks for the next generation devices, which are expected to revolutionise our technological world. The unique properties stem from their large surface area-to-volume ratio, very high aspect ratio, and carrier and photon confinement in two dimensions. These nanowires are usually grown by the so-called vapor-liquid-solid mechanism, which relies on a metal nanoparticle to catalyze and seed the growth. An alternative technique to grow the nanowires is by selective area growth technique, where a dielectric mask is first patterned on the substrate prior to growth. In this talk, I will present an overview of compound semiconductor nanowire research activities at The Australian National University. The optical and structural properties of binary and ternary III-V nanowires including GaAs, InGaAs, InP and GaAsSb nanowires grown by metal-organic vapour phase epitaxy will be presented. Various issues such as tapering of the nanowires, compositional non-uniformity along nanowires, crystal structure, carrier lifetime and polarization effect will be discussed. I will also present our results of III-V nanowires grown on Si substrates which are of great interests for the integration of nano-optoelectronic devices on Si platforms. Our results of enhancing the quantum efficiency of nanowires by using plasmonics are promising to improve the performance of nanowire devices. Finally, the results from our nanowire lasers, photodetectors, solar cells and photoelectrodes for water splitting will be presented. Bio: Prof. Tan is currently the Head of the Department of Electronic Materials Engineering at the Research School of Physics and Engineering, The Australian National University. He received his B.E. (Hons) in Electrical Engineering from the University of Melbourne in 1992, after which he worked with Osram in Malaysia as a quality assurance engineer. In 1997, he was awarded the PhD degree from the Australian National University for his dissertation on “Ion beam effects in GaAs-AlGaAs materials and devices”. He has been the past recipient of the Australian Research Council Postdoctoral, QEII and Future Fellowships. He has published/co-published over 350 journal papers, including four book chapters. He is also a co-inventor in 4 US patents related to laser diodes and infrared photodetectors. His research interests include epitaxial growth of low-dimensional compound semiconductors, nanostructured optoelectronic devices and ion-implantation processing of compound semiconductors for optoelectronic device applications. Prof. Tan is a Senior Member of the IEEE. Location: Room: 1064 Bldg: Duncan Hall Rice University, 6100 Main Street MS378 Houston, Texas 77005